High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photoemission

[1]  E. A. Kraut,et al.  Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials , 1980 .

[2]  Weser,et al.  Photoemission surface core-level study of sulfur adsorption on Ge(100). , 1987, Physical review. B, Condensed matter.

[3]  G. Hughes,et al.  An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces , 1998 .

[4]  Fumihiko Maeda,et al.  Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces , 2000 .

[5]  S. Takagi,et al.  Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates , 2004 .

[6]  D. Kwong,et al.  A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/ surface passivation , 2004, IEEE Electron Device Letters.

[7]  J. Campbell,et al.  Thermal desorption of Ge native oxides and the loss of Ge from the surface , 2004 .

[8]  J. Robertson.  High dielectric constant oxides , 2004 .

[9]  Albert Chin,et al.  Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate , 2004 .

[10]  Dim-Lee Kwong,et al.  Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric , 2005 .

[11]  Martin M. Frank,et al.  Hafnium oxide gate dielectrics on sulfur-passivated germanium , 2006 .

[12]  Marc Heyns,et al.  Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices , 2006 .

[13]  Olivier Renault,et al.  High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks , 2007 .

[14]  Chunxiang Zhu,et al.  Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric , 2007, IEEE Electron Device Letters.

[15]  Mircea Modreanu,et al.  Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation , 2008 .

[16]  M. Perego,et al.  XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors , 2008 .

[17]  Piero Pianetta,et al.  Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density , 2009 .

[18]  A. Dimoulas,et al.  Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry , 2010 .

[19]  Y. J. Lee,et al.  Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers , 2010 .

[20]  T. Yasuda,et al.  Structural degradation of thin HfO2 film on Ge during the postdeposition annealing , 2010 .

[21]  M. Caymax,et al.  Atomic layer deposition of Al2O3 on S-passivated Ge , 2011 .

[22]  A. Dimoulas,et al.  The effect of Se and Se/Al passivation on the oxidation of Ge , 2011 .

[23]  High resolution photoemission study of the thermal stability of the HfO2/SiOx/Si(111) system , 2011 .

[24]  M. Caymax,et al.  Scaling the Ge Gate Stack: Toward Sub 1 nm EOT , 2012 .

[25]  Di Wu,et al.  Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation , 2013 .

[26]  R. Chellappan,et al.  Soft x-ray photoemission study of the thermal stability of the Al2O3/Ge (100) interface as a function of surface preparation , 2013 .