Pyroelectric and Piezoelectric Properties of Gan-Based Materials

We review pyroelectric and piezoelectric properties of GaN-based materials. Pyroelectric effects in GaN have been studied in two different regimes: (i) uniform sample heating regime and (ii) under applied temperature gradient along the sample. The modeling results show that the pyroelectric coefficient, P v , in GaN (for c -axis along the contacts) can reach 7x10 5 V/m-K (compared to P v = 5x10 5 V/m-K for the best-known high temperature pyroelectric/piezoelectric material LiTaO 3 ). This points to a high potential of GaN-based sensors for high temperature pyroelectronics. Piezoelectric effects strongly affect the performance of electronic and light-emitting devices based on III-N materials. Piezoelectrically induced charge in heterostructures can be as large as 3 to 4x10 13 cm -2 . Hence, strong lattice polarization effects provide unique possibilities for utilizing GaN-based materials in high temperature piezoelectronics and for their applications in pyroelectric detectors.

[1]  Peter M. Asbeck,et al.  Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors , 1997 .

[2]  Manijeh Razeghi,et al.  Semiconductor ultraviolet detectors , 1996 .

[3]  Michael S. Shur,et al.  Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices , 1997 .

[4]  Electronics Letters , 1965, Nature.

[5]  Eric Sven Hellman,et al.  The Polarity of GaN: a Critical Review , 1998 .

[6]  J. Im,et al.  The role of piezoelectric fields in GaN-based quantum wells , 1998 .

[7]  Yildiz Bayazitoglu,et al.  Elements of Heat Transfer , 1988 .

[8]  Michael S. Shur,et al.  Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors , 1997 .

[9]  M. Shur,et al.  AlGaN/GaN doped channel heterostructure field effect transistors , 1997 .

[10]  M.A. Khan,et al.  0.12-μm gate III-V nitride HFET's with high contact resistances , 1997, IEEE Electron Device Letters.

[11]  Hadis Morkoç,et al.  Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy , 1996 .

[12]  Michael A. Littlejohn,et al.  Monte Carlo calculation of the velocity‐field relationship for gallium nitride , 1975 .

[13]  M. Shur,et al.  Pyroelectricity in gallium nitride thin films , 1996 .

[14]  B. V. Selyuk.  Charged domain boundaries in ferroelectric crystals , 1973 .

[15]  Michael S. Shur,et al.  The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure , 1993 .

[16]  The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures , 1998 .

[17]  M. Shur,et al.  Current‐voltage characteristics of strained piezoelectric structures , 1995 .

[18]  Naoki Kobayashi,et al.  Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors , 1998 .

[19]  David Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .

[20]  U. Mishra,et al.  High performance and large area flip-chip bonded AlGaN/GaN MODFETs , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[21]  M. Shur,et al.  Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN , 1996 .

[22]  M. Shur,et al.  GaN-Based Pyroelectronics and Piezoelectronics , 2000 .

[23]  Michael S. Shur,et al.  Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes , 1997 .

[24]  Shigeru Nakagawa,et al.  Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect , 1998 .

[25]  Michael S. Shur,et al.  Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias , 1994 .

[26]  Michael S. Shur,et al.  Gated photodetector based on GaN/AlGaN heterostructure field effect transistor , 1995 .

[27]  M. O'Keefe,et al.  INVERSION DOMAINS IN GAN GROWN ON SAPPHIRE , 1996 .

[28]  Joan M. Redwing,et al.  AlGaN/GaN HEMTs grown on SiC substrates , 1997 .

[29]  Jin Wang,et al.  Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells , 1997, IEEE Photonics Technology Letters.

[30]  R. Gaska,et al.  High-temperature performance of AlGaN/GaN HFETs on SiC substrates , 1997, IEEE Electron Device Letters.

[31]  R. M. Kolbas,et al.  Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition , 1991 .

[32]  Takashi Mukai,et al.  High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes , 1994 .

[33]  S. Nakamura,et al.  InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[34]  M. Shur,et al.  GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors , 1997 .

[35]  Jacob Fraden,et al.  Handbook of modern sensors , 1997 .

[36]  F. Bechstedt.  Superlattices and Other Heterostructures, Symmetry and Optical Phenomena , 1996 .

[37]  M. Shur,et al.  Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors , 1998 .

[38]  M. Shur,et al.  Piezoresistive effect in GaN–AlN–GaN structures , 1997 .

[39]  Joan M. Redwing,et al.  Piezoelectric charge densities in AlGaN/GaN HFETs , 1997 .

[40]  Remo Guidieri.  Res , 1995, RES: Anthropology and Aesthetics.