Impact of transient currents caused by alternating drain stress in oxide semiconductors

[1]  Hyun Jae Kim,et al.  Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors , 2016, Scientific Reports.

[2]  Mingxiang Wang,et al.  Dynamic degradation of a-InGaZnO thin-film transistors under pulsed gate voltage stress , 2015 .

[3]  Seungwu Han,et al.  Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers , 2015, Scientific Reports.

[4]  Je‐hun Lee,et al.  Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors , 2014 .

[5]  Yang Yang,et al.  Boost Up Mobility of Solution‐Processed Metal Oxide Thin‐Film Transistors via Confining Structure on Electron Pathways , 2014, Advanced materials.

[6]  Yu Cao,et al.  Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors , 2014, Nature Communications.

[7]  J. Woicik,et al.  Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen , 2014 .

[8]  S. M. Iftiquar,et al.  Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors , 2013 .

[9]  C. Hwang,et al.  Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition , 2013 .

[10]  Yukiharu Uraoka,et al.  Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect , 2013 .

[11]  Masashi Kasami,et al.  Active-Matrix Flatpanel Displays and Devices — TFT Technologies and FPD Materials — , 2012 .

[12]  F. Utsuno,et al.  High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer , 2012 .

[13]  Jin Jang,et al.  Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors , 2011 .

[14]  J. Koyama,et al.  Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors , 2010 .

[15]  T. Kamiya,et al.  Present status of amorphous In–Ga–Zn–O thin-film transistors , 2010, Science and technology of advanced materials.

[16]  A. Zunger,et al.  Many-body GW calculation of the oxygen vacancy in ZnO , 2009, 0910.2962.

[17]  J. Kanicki,et al.  Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies , 2009, IEEE Transactions on Electron Devices.

[18]  C. W. Lin,et al.  Degradation of the Capacitance-Voltage Behaviors of the Low-Temperature Polysilicon TFTs under DC Stress , 2007 .

[19]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[20]  T. Fuyuki,et al.  Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope , 2004, IEEE Transactions on Electron Devices.

[21]  H. Ohta,et al.  Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor , 2003, Science.

[22]  Jerzy Kanicki,et al.  Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors , 1993 .

[23]  Jackson,et al.  Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.

[24]  E. Fortunato,et al.  Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances , 2012, Advanced materials.