论文信息 - Optical bistability at the band gap in InAs

Optical bistability at the band gap in InAs

Observation of optical bistability at the band gap in InAs is reported. Clear hysteresis was seen in the reflected signal from a Fabry–Perot etalon consisting of polished n‐type InAs with silver deposited on the back surface. By using the 3.096‐μm line of an HF laser, which matches the band gap at 77 K, bistable switching was achieved with power levels as low as 3 mW (peak intensity 75 W/cm2).

Elsa Garmire | C. D. Poole | C. Poole | E. Garmire

[1] Gisbert Staupendahl,et al. Optical tuning of a tellurium cavity: optical modulation and bistability in the infrared region at room temperature , 1982 .

[2] J. R. Hill,et al. Non-linear refractive index changes in CdHgTe at 175 K with 10.6μm radiation , 1982 .

[3] David A. B. Miller,et al. Optical bistability and signal amplification in a semiconductor crystal: applications of new low‐power nonlinear effects in InSb , 1979 .

[4] T. Moss. Theory of Intensity Dependence of Refractive Index , 1980 .

[5] E. Wright,et al. Theory of Gaussian-beam optical bistability , 1982 .

[6] A. Baldereschi,et al. Energy Levels of Direct Excitons in Semiconductors with Degenerate Bands , 1971 .

[7] M. Burt. Enhanced bandgap resonant nonlinear susceptibility in quantum-well heterostructures , 1983 .

[8] D. Miller,et al. Refractive Fabry-Perot bistability with linear absorption: Theory of operation and cavity optimization , 1981 .

[9] C. T. Seaton,et al. Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors , 1981 .

[10] C. Huang,et al. Low-Temperature Photomagnetoelectric and Photoconductive Effects in n -Type InAs , 1971 .

[11] Spatial separation of carriers in InAs–GaSb superlattices , 1981 .

[12] Hyatt M. Gibbs,et al. Optical bistability in semiconductors , 1979 .