论文信息 - Analytical modeling of transconductance in organic thin-film transistors

Analytical modeling of transconductance in organic thin-film transistors

In this paper we present a new approach to the analytical modeling of transconductance in organic field effect transistors. The proposed model is based on the standard transistor equations and accurately describes the transconductance in saturation regime with a unique formula, that seems suitable for analog circuit design. All the model parameters are discussed in details and simulation of the final model is performed using a Matlab code. Finally we validated the proposed model by comparison of the simulation result with experimental data and good agreement between them is found.

Reza Meshkin | Seyed Ali Sedigh Ziabari

[1] Y. Bonnassieux,et al. Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect Transistors , 2013, IEEE Transactions on Electron Devices.

[2] B. Iñíguez,et al. A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors , 2013, IEEE Transactions on Electron Devices.

[3] Gerard Ghibaudo,et al. Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors , 2011 .

[4] Michael S. Shur,et al. Design Analysis of GaAs Direct Coupled Field Effect Transistor Logic , 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[5] Sui‐Dong Wang,et al. Understanding contact behavior in organic thin film transistors , 2010 .

[6] Luigi Occhipinti,et al. Modeling the gate bias dependence of contact resistance in staggered polycrystalline organic thin film transistors , 2009 .