Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion

Impurity‐free selective layer disordering, utilizing Si3N4 masking stripes and SiO2 defect (vacancy) sources, is used to realize room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers.

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