论文信息 - Temperature-dependent structural characterization of silicon <110> nanowires

Temperature-dependent structural characterization of silicon <110> nanowires

For high speed and performance field effect transistor with high carrier mobility, vertically aligned Si <110> nanowires is demonstrated by chemical vapor deposition via a vapor-liquid-solid growth mechanism. We found that the orientation of NWs was changed from <111> direction to <110> direction on a Si (110) substrate with increasing the growth temperature above ~ 610°C by changing Au-Si eutectic phase. These vertically aligned <110> oriented SiNWs with significantly high carrier mobility opens up new opportunities for high speed and performance future electronic device applications.

[1] Peidong Yang,et al. Silicon Vertically Integrated Nanowire Field Effect Transistors , 2006 .

[2] Walter Riess,et al. Realization of a silicon nanowire vertical surround-gate field-effect transistor. , 2006, Small.

[3] Anupam Roy,et al. Formation of aligned nanosilicide structures in a MBE-grown Au/Si(110) system: a real-time temperature-dependent TEM study , 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

[4] Yann-Michel Niquet,et al. Orientational dependence of charge transport in disordered silicon nanowires. , 2008, Nano letters.

[5] S. T. Lee,et al. Small-Diameter Silicon Nanowire Surfaces , 2003, Science.

[6] J. Tersoff,et al. Sawtooth faceting in silicon nanowires. , 2005, Physical review letters.

[7] Takahiro Kawashima,et al. Control of surface migration of gold particles on Si nanowires. , 2008, Nano letters.

[8] Joan M. Redwing,et al. Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates , 2003 .

[9] J. Pendry,et al. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks , 2001 .

[10] M. Anantram,et al. Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon. , 2008, Nano letters.