A steep-slope transistor based on abrupt electronic phase transition

[1]  S. Cheong,et al.  Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating , 2014, Scientific Reports.

[2]  Jian Shi,et al.  Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping , 2014, Nature Communications.

[3]  Igor L. Markov,et al.  Limits on fundamental limits to computation , 2014, Nature.

[4]  Kai Liu,et al.  Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires , 2014, Scientific reports.

[5]  Charles T Rettner,et al.  Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide. , 2014, Nature nanotechnology.

[6]  Suman Datta,et al.  Nanoscale Structural Evolution of Electrically Driven Insulator to Metal Transition in Vanadium Dioxide , 2013 .

[7]  Jian Shi,et al.  A correlated nickelate synaptic transistor , 2013, Nature Communications.

[8]  T. Hatano,et al.  Gate Control of Electronic Phases in a Quarter-Filled Manganite , 2013, Scientific Reports.

[9]  Zaiyao Fei,et al.  Measurement of a solid-state triple point at the metal–insulator transition in VO2 , 2013, Nature.

[10]  J. Sakai,et al.  Pulsed laser-deposited VO2 thin films on Pt layers , 2013 .

[11]  S. Parkin,et al.  Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation , 2013, Science.

[12]  Eugenie Samuel Reich.  Metal oxide chips show promise , 2013, Nature.

[13]  Ivan K Schuller,et al.  Role of thermal heating on the voltage induced insulator-metal transition in VO2. , 2013, Physical review letters.

[14]  Shriram Ramanathan,et al.  Correlated Electron Materials and Field Effect Transistors for Logic: A Review , 2012, 1212.2684.

[15]  Iuliana Radu,et al.  The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance , 2012 .

[16]  Sayeef Salahuddin,et al.  Dense electron system from gate-controlled surface metal-insulator transition. , 2012, Nano letters.

[17]  W. Haensch,et al.  Device physics: Put the pedal to the metal , 2012, Nature.

[18]  M. Kawasaki,et al.  Collective bulk carrier delocalization driven by electrostatic surface charge accumulation , 2012, Nature.

[19]  R Stanley Williams,et al.  Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices , 2012, Nanotechnology.

[20]  Paolo Lugli,et al.  Science and Engineering Beyond Moore's Law , 2012, Proceedings of the IEEE.

[21]  Shriram Ramanathan,et al.  Relaxation dynamics of ionic liquid—VO2 interfaces and influence in electric double-layer transistors , 2012 .

[22]  A. Millis,et al.  Whither the oxide interface. , 2012, Nature materials.

[23]  Adrian M. Ionescu,et al.  Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.

[24]  Kai Liu,et al.  Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric , 2011, 1107.5291.

[25]  Shimpei Ono,et al.  Electric‐Field Control of the Metal‐Insulator Transition in Ultrathin NdNiO3 Films , 2010, Advanced materials.

[26]  Martin Kunz,et al.  Constant threshold resistivity in the metal-insulator transition of VO 2 , 2010 .

[27]  Wolfgang Porod,et al.  Device and Architecture Outlook for Beyond CMOS Switches , 2010, Proceedings of the IEEE.

[28]  Gokul Gopalakrishnan,et al.  Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer , 2010, 1006.4373.

[29]  Shixiong Zhang,et al.  Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam. , 2009, Nano letters.

[30]  D. R. Khanal,et al.  Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams. , 2009, Nature nanotechnology.

[31]  Shriram Ramanathan,et al.  Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition , 2009, 1006.4376.

[32]  M. Rozenberg,et al.  Taming the Mott Transition for a Novel Mott Transistor , 2008 .

[33]  Sun Jin Yun,et al.  Micrometer x-ray diffraction study of VO 2 films: Separation between metal-insulator transition and structural phase transition , 2008 .

[34]  R. Cavin,et al.  Nanoelectronics: negative capacitance to the rescue? , 2008, Nature nanotechnology.

[35]  Byung-Gyu Chae,et al.  Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging , 2007, Science.

[36]  Young-soo Park,et al.  Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .

[37]  Arthur F. Hebard,et al.  Electric field gating with ionic liquids , 2007 .

[38]  I. Inoue,et al.  Electrostatic carrier doping to perovskite transition-metal oxides , 2005 .

[39]  Gyungock Kim,et al.  Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices , 2004 .

[40]  C. Ahn,et al.  Electric field effect in correlated oxide systems , 2003, Nature.

[41]  D. Youn,et al.  Observation of Mott Transition in VO_2 Based Transistors , 2003, cond-mat/0308042.

[42]  T. M. Rice,et al.  Metal‐Insulator Transitions , 2003 .

[43]  Alexander Pergament,et al.  The effect of electric field on metal-insulator phase transition in vanadium dioxide , 2002 .

[44]  Alexander Pergament,et al.  Electrical switching and Mott transition in VO2 , 2000 .

[45]  G Stefanovich,et al.  Electrical switching and Mott transition in VO2 , 2000 .

[46]  A. Schrott,et al.  Mott transition field effect transistor , 1998 .

[47]  H. Kuwahara,et al.  Current switching of resistive states in magnetoresistive manganites , 1997, Nature.

[48]  A. Pergament,et al.  Electroforming and Switching in Oxides of Transition Metals: The Role of Metal-Insulator Transition in the Switching Mechanism , 1996 .

[49]  Pouget,et al.  Comment on "VO2: Peierls or Mott-Hubbard? A view from band theory" , 1994, Physical Review Letters.

[50]  Allen,et al.  VO2: Peierls or Mott-Hubbard? A view from band theory. , 1994, Physical review letters.

[51]  Robert C. Wolpert,et al.  A Review of the , 1985 .

[52]  C. N. Berglund,et al.  Electronic Properties of V O 2 near the Semiconductor-Metal Transition , 1969 .

[53]  William Paul,et al.  Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature , 1969 .

[54]  F. J. Morin,et al.  Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .