PnP-type InP/InGaAsP/InP bipolar transistor
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A PnP double-heterostructure InGaAsP/InP bipolar transistor was fabricated which is capable of bilateral operation. Forward and reverse current gains of about 15 and 5, respectively, were achieved. In the emitter-up configuration, an offset voltage of 1 V, believed to be due to the valence band discontinuity at the base/collector heterojunction, occurs in the Ic/VCE characteristics.
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