Ferroelectric and piezoelectric properties of Na0.52K0.48NbO3 thin films prepared by radio frequency magnetron sputtering

Ferroelectric Na0.52K0.48NbO3 (NKN) thin film on Pt/Ti/SiO2/Si substrate was prepared using the radio frequency magnetron sputtering method. The single phase and grain morphologies of NKN were confirmed by x-ray diffraction and atomic force microscopy analysis, respectively. The remnant polarization Pr and coercive electric field Ec of NKN film were 22.5 μC/cm2 and 90 kV/cm, respectively. The NKN film displayed low frequency dielectric dispersion in the temperature range 25–500 °C. The leakage current density of the film was 3.0×10−7 A/cm2 at 100 kV/cm. The piezoelectric constant d33 was estimated to be 45 pm/V using the piezoelectric force microscopy.

[1]  I. Kim,et al.  Preparation and Evaluation of Lead-Free Na0.5K0.5NbO3 Ferroelectric Thin Films , 2008 .

[2]  Isaku Kanno,et al.  Piezoelectric Properties of (K,Na)NbO3 Films Deposited by RF Magnetron Sputtering , 2008 .

[3]  J. S. Lee,et al.  The Ferroelectric Properties of (Na0.5K0.5)NbO3 Thin Films Fabricated by rf-Magnetron Sputtering , 2006 .

[4]  B. Park,et al.  Piezoelectric properties of highly oriented lead-free Na 0.5K 0.5NbO 3 films as determined using piezoelectric force microscopy , 2006 .

[5]  A. Grishin,et al.  Characterization of heteroepitaxial Na0.5K0.5NbO3/La0.5Sr0.5CoO3 electro-optical cell , 2005 .

[6]  Yasuyoshi Saito,et al.  Lead-free piezoceramics , 2004, Nature.

[7]  Yiping Guo,et al.  Ferroelectric-relaxor behavior of (Na0.5K0.5)NbO3-based ceramics , 2004 .

[8]  A. Grishin,et al.  Optical waveguiding in magnetron-sputtered Na0.5K0.5NbO3 thin films on sapphire substrates , 2003 .

[9]  I. Kim,et al.  Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition , 2002 .

[10]  A. Grishin,et al.  Growth and Characterization of Na_0.5K_0.5NbO_3 Thin Films on Polycrystalline Pt_80Ir_20 Substrates , 2002 .

[11]  A. Grishin,et al.  Na0.5K0.5NbO3 Thin Films for Voltage Controlled Acoustoelectric Device Applications , 2002 .

[12]  A. Grishin,et al.  Na0.5K0.5NbO3/SiO2/Si thin film varactor , 2000 .

[13]  B. S. Kang,et al.  Lanthanum-substituted bismuth titanate for use in non-volatile memories , 1999, Nature.

[14]  Su-Jae Lee,et al.  Low-frequency dielectric relaxation of BaTiO3 thin-film capacitors , 1999 .

[15]  A. Grishin,et al.  Self-assembling ferroelectric Na0.5K0.5NbO3 thin films by pulsed-laser deposition , 1999 .

[16]  Yet-Ming Chiang,et al.  Lead-free high-strain single-crystal piezoelectrics in the alkaline–bismuth–titanate perovskite family , 1998 .

[17]  S. Gevorgian,et al.  Growth and field dependent dielectric properties of epitaxial Na0.5K0.5NbO3 thin films , 1998 .

[18]  J. Scott,et al.  ELECTRONIC CHARACTERISTICS OF THE SRBI2TA2O9-PT JUNCTION , 1998 .

[19]  J. Lee,et al.  Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications , 1998 .

[20]  H. Nagata,et al.  Lead-Free Piezoelectric Ceramics of (Bi1/2Na1/2)TiO3–KNbO3–1/2(Bi2O3·Sc2O3) System , 1997 .