Strained-Si Heterostructure Field Effect Devices

INTRODUCTION Heterostructure Field-Effect Devices Substrate Engineering Gate Dielectrics on Engineered Substrates Strained-Si Technology: Process Integration Nonclassical CMOS Structures Strain-Engineered Hetero-FETs: Modeling and Simulation STRAIN ENGINEERING IN MICROELECTRONICS Stress Induced during Manufacturing Global vs. Local Strain Substrate-Induced Strain Process-Induced Stress Stress/Strain Analysis STRAIN-ENGINEERED SUBSTRATES Epitaxy Heteroepitaxy and Strain Control Engineered Substrates: Technology Characterization of Strained Layers Engineered Substrates ELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES Substrate-Induced Strained-Si Carrier Lifetime Mobility: Thickness Dependence Mobility: Temperature Dependence Diffusion in Strained-Si Process-Induced Strained-Si Uniaxial vs. Biaxial Strain Engineering GATE DIELECTRICS ON ENGINEERED SUBSTRATES Strained-Si MOSFET Structures Thermal Oxidation of Strained-Si Rapid Thermal Oxidation Plasma Nitridation of Strained-Si Effect of Surface Roughness Effect of Strained-Si Layer Thickness High-k Gate Dielectrics on Strained-Si Gate Dielectrics on Ge HETEROSTRUCTURE SiGe/SiGeC MOSFETS SiGe/SiGeC:Material Parameters SiGe Hetero-FETs: Structures and Operation SiGe p-MOSFETs on SOI SiGeC Hetero-FETs SiGe-Based HEMTs Design Issues STRAINED-Si HETEROSTRUCTURE MOSFETS Operating Principle Uniaxial Stress: Process Flow Strained-Si MOSFETs with SiC-Stressor Biaxial Strain: Process Flow Scaling of Strained-Si MOSFETs Strained-Si MOSFETs: Reliability Industry Example: TSMC Industry Example: AMD MODELING AND SIMULATION OF HETERO-FETS Simulation of Hetero-FETs Modeling of Strained-SiMaterial Parameters Simulation of Strained-Si n-MOSFETs Characterization of Strained-Si Hetero-FETs TCAD: Strain-Engineered Hetero-FETs SPICE Parameter Extraction Performance Assessment Summaries and References appear in each chapter.