MOS Model 11 - Level 1101

MOS Model 11, Level 1101, is an updated version of Level 1100 (see NLUR 2001/813). It uses the same basic equations as Level 1100, but uses different geometry scaling rules. It includes two types of geometrical scaling rules: physical rules and binning rules. Moreover, the temperature scaling has been implemented on the ”miniset” level instead of the ”maxiset” level as was the case for Level 1100. A new compact model for MOS transistors has been developed, MOS Model 11 (MM11), the successor of MOS Model 9. MM11 not only gives an accurate description of charges and currents and their first-order derivatives (transconductance, conductance, capacitances), but also of their higherorder derivatives. In other words it gives an accurate description of MOSFET distortion behaviour, and as such MM11 is suitable for digital, analog as well as RF circuit design. MOS Model 11 is a symmetrical, surface-potential-based model. It includes an accurate description of all physical effects important for modern and future CMOS technologies, such as e.g. gate tunnelling current, gate-induced drain leakage, influence of pocket implants, poly-depletion, quantum-mechanical effects and bias-dependent overlap capacitances. The goal of this report is to present the full definition of the model, including the parameter set, the geometrical and temperature scaling rules, the model implementation, and all the equations for currents, charges and noise sources. Apart from the definition also an introduction into the physical background is given, and a basic parameter extraction procedure is described. The complete physical background will be documented separately in a forthcoming report. c ©Koninklijke Philips Electronics N.V. 2002 iii NL-UR 2002/802— September 2002 MOS Model 11 , Level 1101 Unclassified Report Preface and History of Model and Documentation