论文信息 - 2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator

2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator

A novel ultra-high-speed optical gate monolithically integrating a uni-travelling-carrier photodiode and a travelling-wave electroabsorption modulator (TW-EAM) is presented. By using the nonlinear extinction characteristics of the EAM, the minimum gate opening time of 2.3 picoseconds with an extinction ratio of 14 dB is achieved.

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