Hot-carrier-induced circuit degradation in actual DRAM
暂无分享,去创建一个
[1] W. Weber,et al. Proof and quantification of dynamic effects in hot-carrier-induced degradation under pulsed operation conditions , 1991, 29th Annual Proceedings Reliability Physics 1991.
[2] Sung-Mo Kang,et al. Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation , 1992, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[3] J. T. Yue,et al. A comparison of inverter-type circuit lifetime and quasi-static analysis of NMOSFET lifetime , 1991, 29th Annual Proceedings Reliability Physics 1991.
[4] J. E. Chung,et al. Hot-electron-induced input offset voltage degradation in CMOS differential amplifiers , 1992, 30th Annual Proceedings Reliability Physics 1992.
[5] Kueing-Long Chen,et al. The case of AC stress in the hot-carrier effect , 1986, IEEE Transactions on Electron Devices.
[6] Y. Nissan-Cohen,et al. Transient hot-electron effect on n-channel device degradation (MOSFETs) , 1989, International Technical Digest on Electron Devices Meeting.