Developments in the bulk growth of Cd1−xZnxTe for substrates

Abstract Single crystal of CdTe or dilute alloys of Cd 1−y Zn y Te (y 1−z Se z (z 30 cm 2 ) are required as substances for high-quality epitaxial Hg 1−x Cd x Te thin films in the infrared (IR) detector industry. Bridgman or gradient freeze is the most common technique used for commercial production of these materials because of its success in producing large-area substrates of good quality and reproducibility. For epitaxial growth of Hg 1−x Zn x Te, which has been of considerable interest in recent years as an IR detector material, the substrate of choice has been Cd 0.80 Zn 0.20 Te, for lattice matching with long-wavelength Hg 1−x Zn x Te epitaxial layers ( x = 0.15). The primary focus of this paper is on CdZnTe, which is currently the preffered subtrate material and most widely used for both HgCdTe and HgZnTe epitaxy. This paper reviews the current status of bulk substrate technology for IR detector applications, highlighting critical issues and essential research areas for further improvement of these materials.

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