论文信息 - Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects

Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects

Several attempts have been made in the last decade for the advancement of field effect transistors. In this paper, comparative analysis of small signal modeling of FET has been presented. An improved and a proficient parameter extraction strategy applied to FET for mm-wave applications, different performance parameters regarding losses and their variation with higher frequencies are presented. Measurements of the scattering parameters from frequency range of 0.1 GHz to 40 GHz at room temperature with maximum transconductance have been performed. The execution is surveyed through S-parameters estimations to assess the devices intrinsic and extrinsic parameters by utilizing de-embedding method. Experimental and simulated values are compared and found to be in excellent agreement.

W. Rowe | Waseem Afzal | S. Rehman | Amir Afaq

[1] Stephen A. Maas,et al. Nonlinear Microwave and RF Circuits , 2003 .

[2] Neil Goldsman,et al. Numerical simulation of small-signal microwave performance of 4H–SiC MESFET , 2000 .

[3] Fujiang Lin,et al. FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-a new concept , 1994 .

[4] M. Schlechtweg,et al. Generalized Modeling of GaAs Mesfets and Modfets Based on Highly Accurate Broadband Measurements , 1989, 1989 19th European Microwave Conference.

[5] W. R. Curtice,et al. Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics , 1984 .

[6] J. Frey,et al. Physical basis of short-channel MESFET operation , 1979, IEEE Transactions on Electron Devices.

[7] H. Fukui,et al. Determination of the basic device parameters of a GaAs MESFET , 1979, The Bell System Technical Journal.

[8] J. S. Shapiro,et al. An epitaxial GaAs field-effect transistor , 1969 .

[9] Carver A. Mead,et al. Schottky barrier gate field effect transistor , 1966 .

[10] J. Bardeen,et al. The transistor, a semi-conductor triode , 1948 .

[11] Allan Ward,et al. SiC and GaN Wide Bandgap Technology Commercial Status , 2008 .

[12] G. Boeck,et al. An ultra wideband 5 W power amplifier using SiC MESFETs , 2004, 34th European Microwave Conference, 2004..