论文信息 - Characterization of a 0.25NA full-field EUV exposure tool

Characterization of a 0.25NA full-field EUV exposure tool

The performance of a 0.25NA full-field EUV exposure tool is characterized in terms of CD uniformity, focus and overlay control, as well as dose uniformity. In addition to the characterization of the scanner, we explore the use of scatterometry techniques for the measurements of extremely fine resolution features, with critical dimensions below 40 nm. The stability of the scanner performance over an extended period of time is assessed.

[1] Christopher P. Ausschnitt. Distinguishing dose from defocus for in-line lithography control , 1999, Advanced Lithography.

[2] Bruno La Fontaine,et al. Flare evaluation of ASML alpha demo tool , 2009, Advanced Lithography.

[3] Yunfei Deng,et al. Exposure tool settings and OPC strategies for EUV lithography at the 16-nm node , 2009, Advanced Lithography.

[4] Harry J. Levinson,et al. Evaluating the performance of a 193-nm hyper-NA immersion scanner using scatterometry , 2007, SPIE Advanced Lithography.

[5] John Arnold,et al. The use of EUV lithography to produce demonstration devices , 2008, SPIE Advanced Lithography.

[6] Henry J. L. Megens,et al. Latent image metrology for production wafer steppers , 1995, Advanced Lithography.

[7] John Arnold,et al. Integration of EUV lithography in the fabrication of 22-nm node devices , 2009, Advanced Lithography.

[8] Anita Fumar-Pici,et al. Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools , 2009, Advanced Lithography.

[9] Obert Wood,et al. Modeling and experiments of non-telecentric thick mask effects for EUV lithography , 2009, Advanced Lithography.