Modeling of substrate current in p-MOSFET's

It is shown that the substrate current characterization method and modeling approach used for n-MOSFET's is also applicable to p-MOSFET's. The impact ionization rate extracted for holes is found to be 8 × 106exp (-3.7 × 106/E), where E is the electric field. Based on our measurement and modeling result, roughly twice the channel electric field is required for p-MOSFET's to generate the same amount of substrate current as n-MOSFET's. The hot-carrier-induced breakdown voltage is therefore also about two times larger.

[1]  T. Tsuchiya,et al.  Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's , 1985, IEEE Electron Device Letters.

[2]  C. Hu,et al.  A simple method to characterize substrate current in MOSFET's , 1984, IEEE Electron Device Letters.

[3]  C. Hu,et al.  Lucky-electron model of channel hot-electron injection in MOSFET'S , 1984 .

[4]  Chenming Hu,et al.  Lucky-electron model of channel hot-electron injection in MOSFET'S , 1984, IEEE Transactions on Electron Devices.

[5]  R. Van Overstraeten,et al.  Charge multiplication in silicon p-n junctions☆ , 1963 .

[6]  W. N. Grant.  Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .

[7]  C. Hu.  Lucky-electron model of channel hot electron emission , 1979, 1979 International Electron Devices Meeting.

[8]  Chenming Hu.  Hot-electron effects in MOSFETs , 1983, 1983 International Electron Devices Meeting.

[9]  J. Sun,et al.  Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon , 1983 .

[10]  Y.A. El-Mansy,et al.  Modelling weak avalanche multiplication currents in IGFETS and SOS transistors for CAD , 1975, 1975 International Electron Devices Meeting.

[11]  Chenming Hu,et al.  An analytical breakdown model for short-channel MOSFET's , 1982, IEEE Transactions on Electron Devices.

[12]  T.Y. Chan,et al.  Dependence of channel electric field on device scaling , 1985, IEEE Electron Device Letters.