Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers
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I. Shchemerov | E. Yakimov | S. Stepanov | V. Nikolaev | A. Pechnikov | M. Scheglov | S. Pearton | A. Vasilev | A. Polyakov | A. Chernykh | L. Guzilova | A. Kochkova | B. Kushnarev | A. Almaev