Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition

Data are presented showing that GaAs1−y Py grown on GaAs by metalorganic chemical vapor deposition (MOCVD) at relatively low temperature (∼640 °C) exhibits ordering on the column V sublattice. These data, with electron diffraction data and impurity‐induced layer disordering data, show that column III site and column V site ordering is possible for the quaternary InGaAsP grown on GaAs by MOCVD at relatively low temperature (∼640 °C). Ordered InGaAsP grown on GaAs shifts in photoluminescence wavelength ∼130 meV higher in energy with disordering by annealing or by impurity‐induced intermixing.