论文信息 - Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

Fully microscopic models are used to investigate the structural dependence of InGaN∕GaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.

[1] Stephan W Koch,et al. The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors , 1996 .

[2] Werner Wegscheider,et al. Microscopic analysis of optical gain in InGaN/GaN quantum wells , 2006 .

[3] W. Chow,et al. Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers , 1999 .

[4] Lindberg,et al. Effective Bloch equations for semiconductors. , 1988, Physical review. B, Condensed matter.

[5] Stephan W Koch,et al. Quantum theory of the optical and electronic properties of semiconductors, fifth edition , 2009 .

[6] Jerry R. Meyer,et al. Band parameters for nitrogen-containing semiconductors , 2003 .

[7] Jorg Hader,et al. Microscopic modeling of gain and luminescence in semiconductors , 2003 .

[8] Stephan W Koch,et al. Quantum theory of spontaneous emission and coherent effects in semiconductor microstructures , 1999 .

[9] Shun Lien Chuang,et al. k.p method for strained wurtzite semiconductors , 1996 .

[10] Jorg Hader,et al. Beyond the ABC: carrier recombination in semiconductor lasers , 2006, SPIE OPTO.

[11] Werner Wegscheider,et al. Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers , 2004 .

[12] Peter Blood,et al. Determination of the piezoelectric field in InGaN quantum wells , 2005 .