论文信息 - Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE - 字舞流文

Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE

I. Adesida | V. Kumar | R. Schwindt | E. Piner | Vipan Kumar | F. Khan | E. Piner | Wu Lu