High Performance Integrated PA, T/R Switch For 1.9GHZ Personal Communications Handsets
暂无分享,去创建一个
This paper-will present a state of the art power amplifier and T/R switch GaAs MMIC product for the 1.9GHz Japanese PHP system. The design consists of a single die (1.8" x 1.2") in a 28 lead QSOP surface mount plastic package. The two stage power amplifier exhibits 28 dB gain with greater than 44% PAE at a PldB of 23dBm. The adjacent channel interference level is better than 60dBc at +/-6OOkHz when tested at this output power. The T/R switch exhibits 1dB insertion loss, 30dB isolation and OIP3 of greater than 44dBm when tested with two 0.25 watt tones.
[1] C. Kermarrec,et al. Novel high performance SPDT power switches using multi-gate FET's , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.