论文信息 - Radiation hardness assurance categories for COTS technologies

Radiation hardness assurance categories for COTS technologies

A comparison of the radiation tolerance of three commercial and one radiation hardened SRAM is presented for total dose, dose rate, and single event effects environments. The devices are categorized according to radiation hardness within each environment and the necessity of considering all applicable environments is enforced. Burn-in effects on radiation hardness are shown for each of the environments.

Marty R. Shaneyfelt | P. S. Winokur | F. W. Sexton | G. L. Hash

[1] Daniel M. Fleetwood,et al. Effects of reliability screens on MOS charge trapping , 1995 .

[2] Lloyd W. Massengill,et al. Transient Radiation Upset Simulations of CMOS Memory Circuits , 1984, IEEE Transactions on Nuclear Science.

[3] R. L. Pease,et al. Plastic packaging and burn-in effects on ionizing dose response in CMOS microcircuits , 1995 .

[4] Marty R. Shaneyfelt,et al. Hardness variability in commercial technologies , 1994 .

[5] Daniel M. Fleetwood,et al. Effects of burn-in on radiation hardness , 1994 .

[6] Charles E. Barnes,et al. Accounting for time-dependent effects on CMOS total-dose response in space environments , 1994 .

[7] N.F. Haddad,et al. Radiation hardened ULSI technology and design of 1M SRAM , 1994, Workshop Record. 1994 IEEE Radiation Effects Data Workshop.