Room‐Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low‐Voltage Operation of Organic Field‐Effect Transistors

Organic fi eld-effect transistors (OFETs) are attractive building blocks for low-cost electronic devices such as radio-frequency identifi cation (RFID) tags, sensors, electronic paper, and backplane circuits for active-matrix displays. [1–6 ] Low-voltage operation of OFETs is necessary for practical applications, hence the need to develop gate dielectrics with a high areal capacitance. [ 7 , 8 ]

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