Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas
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C. Cardinaud | H. Kim | A. Girard | P. Lefaucheux | R. Dussart | T. Tillocher | M. Wang | J. Faguet | G. Antoun | K. Maekawa | D. Zhang