论文信息 - Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C - 字舞流文

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Y. Kumagai | A. Koukitu | Y. Kubota | H. Murakami | Jumpei Tajima | R. Togashi