Laser-produced plasma (LPP) scale-up and commercialization

An EUV light source, created when a high-average power (750 W) Nd:YAG laser forms a plasma in a xenon liquid-spray jet, has been characterized. This source has shown improved conversion from laser to EUV, and a more uniform angular distribution, as the laser pulse energy and average power are increased. System performance has been analyzed and compared with the requirements for future EUV microlithography tools for semiconductor manufacturing. EUV power scaling requirements and factors influencing Cost-of-Ownership are discussed.