Characterization and modeling of high-voltage field-stop IGBTs

The HVFS (high voltage field stop) IGBT is becoming a promising power device in high power application with the robust characteristics offered by the field stop technology, which combines the inherent advantages offered by PT (punch-through) and NPT (nonpunch-through) structures while overcoming the drawbacks of each structure. In this work an electrothermal physics-based model for the field stop IGBT is developed and validated using experimental results for a commercial 1200 V/60 A field stop IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5 kV field stop IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.