论文信息 - A long-channel MOSFET model

A long-channel MOSFET model

The model describes correctly the drain current and the small signal parameters in all regions of operation, including the subthreshold regime and the saturation regime. The model contains as an approximation the charge-sheet model proposed b Brews (see ibid., vol.21, p.345, 1978). Mobility variations along the channel, resulting from the normal and lateral electric fields, can be taken into account.

F. Van de Wiele | F. Wiele

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