论文信息 - Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs

Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs

In this study, we constructed a novel measurement setup with a large current rating to measure fast Id change, and evaluated the decrease in Id due to positive AC gate bias, using commercially available SiC MOSFETs. In addition, by comparing the obtained fast 7d change results with the threshold voltage (Vth) shift measured by a conventional DC gate stress test, we verified that the conventional DC stress test is not sufficient for accurate evaluation of the Vth shift.

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