BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors
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Naoto Horiguchi | Dimitri Linten | Jacopo Franco | Ben Kaczer | Pieter Weckx | Gerhard Rzepa | Hans Mertens | Romain Ritzenthaler | Vamsi Putcha | Adrian Chasin | H. Mertens | R. Ritzenthaler | A. Chasin | N. Horiguchi | D. Linten | G. Rzepa | B. Kaczer | J. Franco | P. Weckx | V. Putcha
[1] T. Grasser,et al. Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices—Application to NBTI , 2010, IEEE Electron Device Letters.
[2] H. Mertens,et al. Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[3] Diederik Verkest,et al. Characterization and simulation methodology for time-dependent variability in advanced technologies , 2015, 2015 IEEE Custom Integrated Circuits Conference (CICC).
[4] T. Grasser,et al. Ubiquitous relaxation in BTI stressing—New evaluation and insights , 2008, 2008 IEEE International Reliability Physics Symposium.
[5] A. Visconti,et al. Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories , 2009, IEEE Transactions on Electron Devices.
[6] Tibor Grasser,et al. Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities , 2012, Microelectron. Reliab..
[7] M.J.M. Pelgrom,et al. Matching properties of MOS transistors , 1989 .
[8] B. Kaczer,et al. NBTI in Replacement Metal Gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).
[9] J. Colinge,et al. Nanowire Transistors: Physics of Devices and Materials in One Dimension , 2016 .
[11] R. Degraeve,et al. Origin of NBTI variability in deeply scaled pFETs , 2010, 2010 IEEE International Reliability Physics Symposium.
[12] Naoto Horiguchi,et al. Extraction of the Random Component of Time-Dependent Variability Using Matched Pairs , 2015, IEEE Electron Device Letters.
[13] R. Degraeve,et al. Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices , 2012, IEEE Transactions on Electron Devices.
[14] A. Hikavyy,et al. Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias , 2011, 2011 International Electron Devices Meeting.
[15] H. Mertens,et al. Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates , 2016, 2016 IEEE Symposium on VLSI Technology.
[16] N. Horiguchi,et al. Complete extraction of defect bands responsible for instabilities in n and pFinFETs , 2016, 2016 IEEE Symposium on VLSI Technology.