A SiC MOSFET Power Module With Integrated Gate Drive for 2.5 MHz Class E Resonant Converters
暂无分享,去创建一个
Stig Munk-Nielsen | Asger Bjørn Jørgensen | Christian Uhrenfeldt | Unnikrishnan Raveendran Nair | S. Munk‐Nielsen | C. Uhrenfeldt | A. Jørgensen
[1] Wensong Yu,et al. A Medium-Voltage Medium-Frequency Isolated DC–DC Converter Based on 15-kV SiC MOSFETs , 2017, IEEE Journal of Emerging and Selected Topics in Power Electronics.
[2] Daniel Kearney,et al. PCB Embedded Power Electronics for Low Voltage Applications , 2016 .
[4] Continuous switching of ultra-high voltage silicon carbide MOSFETs , 2016, 2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
[5] Eckart Hoene,et al. Study on Packaging and Driver Integration with GaN Switches for Fast Switching , 2016 .
[6] Otto Kreutzer,et al. Optimum gate driver design to reach SiC-MOSFET's full potential — Speeding up to 200 kV/μs , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
[7] Jonathan Hayes,et al. Dynamic Characterization of Next Generation Medium Voltage (3.3 kV, 10 kV) Silicon Carbide Power Modules , 2017 .
[8] Ramkrishan Maheshwari,et al. Study on Resonant Gate Driver circuits for high frequency applications , 2016, 2016 IEEE 6th International Conference on Power Systems (ICPS).
[9] Wensong Yu,et al. Design and application of a 1200V ultra-fast integrated Silicon Carbide MOSFET module , 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).
[10] B. J. Baliga,et al. Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.
[11] Stig Munk-Nielsen,et al. Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz , 2017, 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
[12] Dragan Maksimovic,et al. Converter Transfer Functions , 2001 .
[13] Ramkrishan Maheshwari,et al. New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs , 2017, IEEE Transactions on Industrial Electronics.
[14] T. Chow,et al. Silicon carbide benefits and advantages for power electronics circuits and systems , 2002, Proc. IEEE.
[15] Stig Munk-Nielsen,et al. Low inductive test bench for resonant converters , 2015, 2015 International Conference on Renewable Energy Research and Applications (ICRERA).
[16] Wensong Yu,et al. 3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
[17] Eckart Hoene,et al. Embedded Very Fast Switching Module for SiC Power MOSFETs , 2015 .
[18] Wolfgang Wondrak,et al. Dielectric strength and thermal performance of PCB-embedded power electronics , 2014, Microelectron. Reliab..
[19] Wei Liang,et al. 13.56 MHz High Density DC–DC Converter With PCB Inductors , 2013, IEEE Transactions on Power Electronics.
[20] M.G. Egan,et al. An assessment of resonant gate drive techniques for use in modern low power dc-dc converters , 2005, Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005..