Wide-Bandwidth, High-Linearity, 2.8-GS/s, 10-bit Accurate Sample and Hold Amplifier in 130-nm SiGe BiCMOS

This paper presents a highly linear BiCMOS sample and hold amplifier (SHA) providing 2.8-GS/s intermediate frequency (IF) sampling for a 1-GHz input bandwidth spanning from 1.5 to 2.5 GHz. A single-transistor hold-mode feedthrough cancellation technique is implemented to remove distortion resulting from the nonlinear parasitic capacitance at the sampling node. The SHA is designed in a mainstream 130-nm BiCMOS technology using SiGe heterojunction bipolar transistors to buffer and sample the wideband input. The proposed SHA enables monolithic integration with a high-speed analog-to-digital converter core to realize a high-performance converter solution. This independent sampling front end occupies a core chip area of 0.6 mm2 and consumes an average power of 1.26 W. The SHA is a pseudo-differential open-loop design that includes two cascaded track-and-hold amplifiers, a high-speed clock driver, and externally adjustable current mirror biases. The high-speed clock drivers and buffers add 170 mW to the total power consumption. The measurements of the fabricated SHA show a 10-bit effective resolution across the 1-GHz IF bandwidth and < −61-dBc HD2 and HD3.

[1]  Behzad Razavi,et al.  Design Considerations for Interleaved ADCs , 2013, IEEE Journal of Solid-State Circuits.

[2]  Yuan Lu,et al.  An 8-bit, 12 GSample/sec SiGe track-and-hold amplifier , 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

[3]  Ramon Gomez Theoretical Comparison of Direct-Sampling Versus Heterodyne RF Receivers , 2016, IEEE Transactions on Circuits and Systems I: Regular Papers.

[4]  Lawrence E. Larson,et al.  A broadband 10 GHz track-and-hold in Si/SiGe HBT technology , 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).

[5]  Waleed Khalil,et al.  A High Linearity, 2.8 GS/s, 10-bit Accurate, Sample and Hold Amplifier in 130 nm SiGe BiCMOS , 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS).

[6]  Yusuf Leblebici,et al.  22.1 A 90GS/s 8b 667mW 64× interleaved SAR ADC in 32nm digital SOI CMOS , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

[7]  Munkyo Seo,et al.  Low Distortion 50 GSamples/s Track-Hold and Sample-Hold Amplifiers , 2014, IEEE Journal of Solid-State Circuits.

[8]  Andrea Boni,et al.  Low-power GS/s track-and-hold with 10-b resolution at Nyquist in SiGe BiCMOS , 2006, IEEE Transactions on Circuits and Systems II: Express Briefs.

[9]  Patricia Desgreys,et al.  Single-ended/differential 2.5-GS/s double switching Track-and-hold amplifier with 26GHz bandwidth in SiGe BiCMOS technology , 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

[10]  S.P. Voinigescu,et al.  Design Methodology for a 40-GSamples/s Track and Hold Amplifier in 0.18-$muhbox m$SiGe BiCMOS Technology , 2006, IEEE Journal of Solid-State Circuits.