Three-Dimensional Self-Consistent Simulation of the Charging Time Response in Silicon Nanocrystal Flash Memories

A numerical model to calculate the tunneling time from the channel of a metal–oxide–semiconductor device into a silicon nanocrystal embedded in SiO2 is presented. Self-consistent simulations of the Kohn–Sham and Poisson equations are performed to study the role of the size, shape, and barrier thickness of a quantum dot (QD). We found that the charging process is very sensitive to the shape of the QD, resulting in changes of several orders of magnitude in the electron transfer and retention times.

[1]  A. Thean,et al.  Geometry and strain effects on single-electron charging in silicon nano-crystals , 2001 .

[2]  Danny C. Sorensen,et al.  Deflation Techniques for an Implicitly Restarted Arnoldi Iteration , 1996, SIAM J. Matrix Anal. Appl..

[3]  Danny C. Sorensen,et al.  Implicit Application of Polynomial Filters in a k-Step Arnoldi Method , 1992, SIAM J. Matrix Anal. Appl..

[4]  Richard M. Martin,et al.  Self-consistent calculation of the electronic structure and electron-electron interaction in self-assembled InAs-GaAs quantum dot structures , 1998 .

[5]  Visible photoluminescence of SiO2 implanted with carbon and silicon , 1996 .

[6]  Jovanovic,et al.  Self-consistent analysis of single-electron charging effects in quantum-dot nanostructures. , 1994, Physical review. B, Condensed matter.

[7]  A. Thean,et al.  Strain Effect in Large Silicon Nanocrystal Quantum Dots , 2001, Physical Models for Quantum Dots.

[8]  J. C. Slater Statistical Exchange-Correlation in the Self-Consistent Field , 1972 .

[9]  Toshiro Hiramoto,et al.  Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals , 1998 .

[10]  G. Iannaccone,et al.  Three-dimensional simulation of nanocrystal Flash memories , 2001 .

[11]  Jean-Pierre Leburton,et al.  Stark Effect and Single-Electron Charging in Silicon Nanocrystal Quantum Dots , 2001, Physical Models for Quantum Dots.

[12]  Naoto Horiguchi,et al.  Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation , 1998 .

[13]  Chao Yang,et al.  ARPACK users' guide - solution of large-scale eigenvalue problems with implicitly restarted Arnoldi methods , 1998, Software, environments, tools.

[14]  Sandip Tiwari,et al.  A silicon nanocrystals based memory , 1996 .

[15]  J. Bardeen Tunnelling from a Many-Particle Point of View , 1961 .

[16]  Sandip Tiwari,et al.  Single charge and confinement effects in nano-crystal memories , 1996 .

[17]  J. Janak,et al.  Proof that ? E /? n i =e in density-functional theory , 1978 .

[18]  Sandip Tiwari,et al.  Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors , 1998 .