A high efficiency full-wave rectifier in standard CMOS Technology

In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mum 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 kOmega load, resulting in a measured power conversion efficiency of 85%.

[1]  T. R. Yasuda,et al.  A power-on reset pulse generator for low voltage applications , 2001, ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196).

[2]  P. Villard,et al.  A 3.4Mb/s RFID Front-end for Proximity Applications Based on a Delta-modulator , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[3]  Chi-Ying Tsui,et al.  Integrated Low-Loss CMOS Active Rectifier for Wirelessly Powered Devices , 2006, IEEE Transactions on Circuits and Systems II: Express Briefs.

[4]  D.J. Allstot.  A precision variable-supply CMOS comparator , 1982, IEEE Journal of Solid-State Circuits.

[5]  M.P. Flynn,et al.  An RF-powered, wireless CMOS temperature sensor , 2006, IEEE Sensors Journal.

[6]  M. Ghovanloo,et al.  Fully integrated wideband high-current rectifiers for inductively powered devices , 2004, IEEE Journal of Solid-State Circuits.

[7]  K. Najafi,et al.  A Modular 32-site wireless neural stimulation microsystem , 2004, IEEE Journal of Solid-State Circuits.