Research on the Characteristics of Graphene-metal Contact

As a new type of semiconductor material with good electrical and mechanical properties, graphene has broad applications. The important factor affecting the performance of graphene devices is the contact resistance of graphene and metal, which is much higher than traditional semiconductor contact resistance. Based on MOSFET structure, the graphenemetal contact resistance is analyzed by Laudauer formula, where the graphene-metal atomic distance is simulated by the density functional theory. The simulation results show that the graphene-metal contact has two kinds of characteristics which are chemical absorption such as graphene-Pd and physical absorption such as graphene-Pt. The contact resistivities of graphene-Pd and graphene-Pt calculated by the presented analytical and simulation method are consistent with the experimental results.

[1]  A. Reina,et al.  Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. , 2009, Nano letters.

[2]  R. Ruoff,et al.  The chemistry of graphene oxide. , 2010, Chemical Society reviews.

[3]  W. Goddard,et al.  Contact Resistance Properties between Nanotubes and Various Metals from Quantum Mechanics , 2007 .

[4]  C. Dimitrakopoulos,et al.  Reducing contact resistance in graphene devices through contact area patterning. , 2013, ACS nano.

[5]  Tian-Ling Ren,et al.  Highly Sensitive and Portable Gas Sensing System Based on Reduced Graphene Oxide , 2016 .

[6]  G. Fiori,et al.  Electrical properties of graphene-metal contacts , 2017, Scientific Reports.

[7]  Stephan Roche,et al.  Physical model of the contact resistivity of metal-graphene junctions , 2014 .

[8]  S. Vishvakarma,et al.  A Unified Scalable Quasi-Ballistic Transport Model of GFET for Circuit Simulations , 2018, IEEE Transactions on Electron Devices.

[9]  L. Selmi,et al.  Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling , 2014, IEEE Transactions on Electron Devices.

[10]  Antonio Gnudi,et al.  Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation , 2013, IEEE Transactions on Electron Devices.

[11]  Hui-Ming Cheng,et al.  High Sensitivity Gas Detection Using a Macroscopic Three-Dimensional Graphene Foam Network , 2011, Scientific reports.

[12]  F. Xia,et al.  The origins and limits of metal-graphene junction resistance. , 2011, Nature nanotechnology.

[13]  G. Fiori,et al.  On Transport in Vertical Graphene Heterostructures , 2014, IEEE Electron Device Letters.

[14]  J. Kysar,et al.  Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene , 2008, Science.

[15]  J. Brink,et al.  First-principles study of the interaction and charge transfer between graphene and metals , 2009, 0902.1203.