论文信息 - Site-controlled, high density InAs quantum dots by nanoscale selective area epitaxy

Site-controlled, high density InAs quantum dots by nanoscale selective area epitaxy

High density, ordered arrays of InAs quantum dots by electron beam lithography and selective area epitaxy emitting in the 1.1μm range are demonstrated. The role of mask geometry on quantum dot nucleation is determined.

J. Coleman | N. Dias | U. Reddy | J. Young | A. Garg

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