论文信息 - Single Crystal Growth and Electrical Properties of Gallium Monotelluride

Single Crystal Growth and Electrical Properties of Gallium Monotelluride

Single crystals of GaTe were prepared in our laboratory by a special modified Bridgman technique method. Measurements of the electrical conductivity and Hall effect between 210 and 450 K were carried out on GaTe samples in two crystallographic directions. The Hall coefficient is positive and varies with the crystallographic direction. A unique mobility behaviour and strong anistropy in the carrier mobility were observed. The Hall mobilities parallel and perpendicular to the C-axis, at room temperature, were 12 cm/V · s and 25.12 cm2/V ·s, respectively. The free carrier concentration lies between 1013 − 1014 cm−3 at room temperature.

G. Gamal | M. Nassary | S. A. Hussein | A. Nagat

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