Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

Deposited Ni, Pd, and Pt films on $n$-type Si have been annealed up to 700\ifmmode^\circ\else\textdegree\fi{}C. Silicide formation was monitored by MeV $^{4}\mathrm{He}$ Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward $I\ensuremath{-}V$ characteristics. The values of the barrier heights are 0.66 eV for ${\mathrm{Ni}}_{2}$Si and NiSi, 0.75 eV for ${\mathrm{Pd}}_{2}$Si; 0.85 eV for ${\mathrm{Pt}}_{2}$Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase.