A 2.14 GHz, 0.78 dB noise figure CMOS low noise amplifier

This work presents a 2 GHz LNA designed for UMTS mobile terminals. The circuit is implemented in a 0.13 mum CMOS technology. In design methodology small signal and noise parameters of the amplifier are combined, and pad capacitance is used for improving the noise performance. The designed amplifier shows 0.78 dB noise figure and 12 dB gain at 2.14 GHz for 3.5 mA supply current and 1.2 V supply voltage

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