Multi-port memory device

Towards a port memory device, in more detail a multi-the invention, and more particularly relates to a multi-memory semiconductor design technology relates to a driving method for the global data buses of a memory device port. The present invention multi capable of preventing the global data bus driving efficiency degradation due to unnecessary charging source in the global data bus transceiver structure of the current sensing method - there is provided a memory device port. The present invention multi having a data transmission block (bank, ports, the global data bus connection) to exchange the global data bus and data to a data transmission structure of the current sensing scheme-port memory device, the receiver of the data transmission block and placing the switch between the global data bus to present a global data during the driving adopted a scheme to block an unnecessary charging source, with a preferred switch on / off control model. According to the present invention To this end, and using a read or write command is applied during the activation data, the drive pulse (DP) that is, the data receiver to substantially receive the data that is used to latch the data received so as to prevent the block from the global data bus It uses the captured signal (CP). In this case, it is possible upon global data driving reducing unnecessary charging source to the power cutoff by giving consumption, reducing the size of the discharge transistors in the transmitter of the data transmission block. A multi-port memory, a global data bus, the current sensing method, the charge source, the discharge time