Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation

[1]  Jian Sun,et al.  Arsenic doping for synthesis of nanocrystalline p-type ZnO thin films , 2006 .

[2]  E. Alves,et al.  Direct evidence for As as a Zn-site impurity in ZnO. , 2005, Physical review letters.

[3]  N. Dhere,et al.  p type doping of zinc oxide by arsenic ion implantation , 2005 .

[4]  Y. Ryu,et al.  ZnO devices: Photodiodes and p-type field-effect transistors , 2005 .

[5]  M. Jeong,et al.  Arsenic doping of ZnO nanowires by post-annealing treatment , 2005 .

[6]  C. H. Park,et al.  Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide. , 2004, Physical review letters.

[7]  Hyun-Sik Kim,et al.  Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant , 2003 .

[8]  T. S. Lee,et al.  Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition , 2003 .

[9]  D. C. Reynolds,et al.  Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy , 2002 .

[10]  Suhuai Wei,et al.  Origin of p -type doping difficulty in ZnO: The impurity perspective , 2002 .

[11]  S. Vézian,et al.  Spectroscopy of Excitons, Bound Excitons and Impurities in h‐ZnO Epilayers , 2002 .

[12]  David C. Look,et al.  Recent Advances in ZnO Materials and Devices , 2001 .

[13]  A. Zunger,et al.  Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO , 2001 .

[14]  Masashi Kawasaki,et al.  Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films , 1998 .

[15]  D. C. Reynolds,et al.  Electrical properties of bulk ZnO , 1998 .

[16]  Masashi Kawasaki,et al.  Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature , 1997 .

[17]  R. Service.  Will UV Lasers Beat the Blues? , 1997, Science.

[18]  Bruce E. Gnade,et al.  Mechanisms behind green photoluminescence in ZnO phosphor powders , 1996 .