Luminescence properties of ZnS/GaAs grown by gas source MBE
暂无分享，去创建一个
[1] Keiji Tanaka,et al. New and Simple MOCVD Technique Using Completely Gaseous MO-Sources Especially Useful for Growing Zn-Chalcogenide Films , 1984 .
[2] T. Taguchi,et al. Excitonic and time-resolved edge emissions of iodine-doped cubic ZnS crystals excited by an excimer laser , 1984 .
[3] J. Steeds,et al. High resolution in scanning cathodoluminescence of ZnS “edge emission” , 1982 .
[4] M. S. Skolnick,et al. Optical properties of undoped organometallic grown ZnSe and ZnS , 1982 .
[5] T. Yao,et al. Molecular beam epitaxy of zinc chalcogenides , 1981 .
[6] J. Woods,et al. Edge emission in zinc sulphide , 1980 .
[7] S. Oda,et al. A new emission band in self-activated ZnS , 1979 .
[8] H. Kawai,et al. Exciton structure in luminescence excitation spectra of ZnS phosphors , 1977 .
[9] B. Ray. II-VI compounds , 1969 .
[10] D. Marple,et al. Temperature dependence of the optical band gap in ZnS , 1959 .