论文信息 - Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

This paper presents the models for several components needed for GaN IC design. MIT virtual source GaNFET (MVSG) model works very well in modelling the high-voltage p-GaN gate power HEMTs and low-voltage GaN logic transistors. The 2DEG resistor can be modelled either using MVSG model or empirical spice model. Low ohmic resistance can be simply modelled with empirical equation. Circuit simulations and measurements demonstrate the convergence and accuracy of the models.

[1] Li-Shiuan Peh,et al. MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation , 2014, 2014 IEEE International Electron Devices Meeting.

[2] Enrico Sangiorgi,et al. Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs , 2017, IEEE Electron Device Letters.

[3] Guido Groeseneken,et al. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration , 2018, IEEE Electron Device Letters.