Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
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G. Groeseneken | S. You | X. Li | S. Decoutere | Z. Chen | J. Liu | Y. Yamashita | K. Kobayashi
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[3] Guido Groeseneken,et al. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration , 2018, IEEE Electron Device Letters.