论文信息 - Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures - 字舞流文

Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

I. Buyanova | V. Markevich | B. Monemar | L. Murin | J. Lindström | T. Hallberg

[1] W. Bullis,et al. Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption , 1989 .