Circuit implementation to describe the physical behavior of phase change memory

A method to implementation a circuit model to describe the physical properties of phase change memory (PCM) is discussed. Physical effects including self-heating and data retention are described by sub-circuits that used to produce the physical behaviors. Simulations of PCM behaviors during various operation modes are performed with the developed model. The model can be combined with other circuit elements to study a complete PCM circuits including drivers and access circuits.

[1]  X.Q. Wei,et al.  HSPICE macromodel of PCRAM for binary and multilevel storage , 2006, IEEE Transactions on Electron Devices.

[2]  X.Q. Wei,et al.  Thermal modelling and simulation of non-volatile and non-rotating phase change memory cell , 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

[3]  I. Karpov,et al.  Nucleation switching in phase change memory , 2007 .

[4]  D. Ielmini,et al.  Intrinsic Data Retention in Nanoscaled Phase-Change Memories—Part I: Monte Carlo Model for Crystallization and Percolation , 2006, IEEE Transactions on Electron Devices.

[5]  S. Lai,et al.  Current status of the phase change memory and its future , 2003, IEEE International Electron Devices Meeting 2003.

[6]  D. Ielmini,et al.  A Physics-Based Crystallization Model for Retention in Phase-Change Memories , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[7]  Jin He,et al.  Verilog-A model for phase change memory simulation , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

[8]  D. Ielmini,et al.  Impact of crystallization statistics on data retention for phase change memories , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..