A bipolar integrated silicon pressure sensor

Abstract An integrated piezoresistive-type silicon pressure sensor with a square waveform, where the pulse width is related to the applied pressure, has been designed and fabricated. The sensor and its signal-conditioning circuitry are fabricated in a double-diffused isolation bipolar process on the same chip and the shaping of the sensor is accomplished using an EDP anisotropic etchant. These circuits are designed to stabilize the change in sensitivity due to variations in temperature and supply voltage. The temperature coefficient of the output frequency is 160 ppm/°C.

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