Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield

This work benchmarks the performance of GAA MOSFETs against that of optimized SOI FinFETs at 10 nm gate length. The yield of 6-T SRAM cells implemented with these advanced MOSFET structures is then investigated. GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.