High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

High-performance CMOS circuits are fabricated from excimer-laser-annealed poly-Si TFTs on a glass substrate (300/spl times/300 mm). The propagation delay time of the 121 stage CMOS ring oscillators with 0.5 /spl mu/m gate length is 0.18 nsec at 5 V supply voltage. The maximum operating frequency of the 40-stage shift registers with 1 /spl mu/m gate length is 133 MHz at 5 V supply voltage. This value is high enough for peripheral CMOS circuits with line-at-a-time addressing.