High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates
暂无分享,去创建一个
Y. Mishima | M. Takei | N. Sasaki | N. Sasaki | Y. Mishima | F. Takeuchi | K. Yoskino | F. Takeuchi | K. Ohgata | M. Takei | K. Yoskino | K. Ohgata
[1] T. Y. Huang,et al. Small geometry effects in n- and p-channel polysilicon thin film transistors , 1988, Technical Digest., International Electron Devices Meeting.
[2] Jun Koyama,et al. 30.2: A 4.5-in. Full-Color VGA Poly-Si TFT-LCD with Integrated Drivers , 1998 .
[3] Y. Mishima. 3-3 Threshold Voltage Shifts of Sub-Micron poly-Si Thin-Film Transistors by Boron Doping(2.Session 3:AMLCD 1) , 1999 .
[4] K. Mishima,et al. LP‐1: Late‐News Poster: Scaling Effects of Sub‐Micron Low‐Temperature Poly‐Si TFTs , 1999 .
[5] P‐3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly‐Si Films , 2000 .